tm december 2008 FDG332PZ p-channel powertrench ? mosfet ?2008 fairchild semiconductor corporation FDG332PZ rev.b 1 www.fairchildsemi.com 1 FDG332PZ p-channel powertrench ? mosfet - 20v, - 2.6a, 97m : features ? max r ds(on) = 95m : at v gs = -4.5v, i d = -2.6a ? max r ds(on) = 115m : at v gs = -2.5v, i d = -2.2a ? max r ds(on) = 160m : at v gs = -1.8v, i d = -1.9a ? max r ds(on) = 330m : at v gs = -1.5v, i d = -1.0a ? very low level gate drive requirements allowing operation in 1.5v circuits ? very small package outline sc70-6 ? rohs compliant general description this p-channel mosfet uses fairchilds advanced low voltage powertrench ? process. it has been optimized for battery power management applications. applications ? battery management ? load switch mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage -20 v v gs gate to source voltage 8 v i d drain current -continuous -2.6 a -pulsed -9 p d power dissipation (note 1a) 0.75 w power dissipation (note 1b) 0.48 t j , t stg operating and storage junction temperature range -55 to +150 c r t ja thermal resistance, junction to ambient single operation (note 1a) 170 c/w r t ja thermal resistance, junction to ambient single operation (note 1b) 260 device marking device package reel size tape width quantity . 2p FDG332PZ sc70-6 7 8 mm 3000 units d d g d d s d s d d g d pin 1 sc70-6
FDG332PZ p-channel powertrench ? mosfet www.fairchildsemi.com 2 ?2008 fairchild semiconductor corporation FDG332PZ rev.b 1 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = -250 p a, v gs = 0v -20 v ' bv dss ' t j breakdown voltage temperature coefficient i d = -250 p a, referenced to 25c -13 mv/c i dss zero gate voltage drain current v ds = -16v, v gs = 0v -1 p a i gss gate to source leakage current v gs = 8v, v ds = 0v 10 p a on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = -250 p a -0.4 -0.7 -1.5 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = -250 p a, referenced to 25c 2.5 mv/c r ds(on) static drain to source on resistance v gs = -4.5v, i d = -2.6a 73 95 m : v gs = -2.5v, i d = -2.2a 90 115 v gs = -1.8v, i d = -1.9a 117 160 v gs = -1.5v, i d = -1.0a 147 330 v gs = -4.5v, i d = -2.6a , t j = 125c 100 133 g fs forward transconductance v dd = -5v, i d = -2.6a 9 s dynamic characteristics c iss input capacitance v ds = -10v, v gs = 0v, f = 1mhz 420 560 pf c oss output capacitance 85 115 pf c rss reverse transfer capacitance 75 115 pf switching characteristics t d(on) turn-on delay time v dd = -10v, i d = -2.6a, v gs = -4.5v, r gen = 6 : 5.2 10 ns t r rise time 4.8 10 ns t d(off) turn-off delay time 59 95 ns t f fall time 28 45 ns q g total gate charge v gs = -4.5v, v dd = -10v, i d = -2.6a 7.6 10.8 nc q gs gate to source charge 0.9 nc q gd gate to drain miller charge 1.9 nc drain-source diode characteristics i s maximum continuous drain-source diode forwar d current -0.6 a v sd source to drain diode forward voltage v gs = 0v, i s = -0.6a (note 2) -0.7 -1.2 v t rr reverse recovery time i f = 2.6a, di/dt = 100a/ p s 28 45 ns q rr reverse recovery charge 8 13 nc and maximum ratings notes: 1. r t ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ca is determined by the user's board design. 2. pulse test: pulse width < 30 0 p s, duty cycle < 2.0%. a. 170c/w when mounted on a 1 in 2 pad of 2 oz copper . b. 260c/w when mounted on a minimum pad of 2 oz copper.
FDG332PZ p-channel powertrench ? mosfet www.fairchildsemi.com 3 ?2008 fairchild semiconductor corporation FDG332PZ rev.b 1 typical characteristics t j = 25c unless otherwise noted figure 1. 0.0 0.4 0.8 1.2 1.6 2.0 0 3 6 9 v gs = -2.5v v gs = -4.5v v gs = -1.5v v gs = -1.8v v gs = -3v pulse duration = 80 p s duty cycle = 0.5%max -i d , drain current (a) -v ds , drain to source voltage (v) on-region characteristics figure 2. 0369 0.5 1.0 1.5 2.0 2.5 v gs = -2.5v v gs = -1.8v pulse duration = 80 p s duty cycle = 0.5%max normalized drain to source on-resistance -i d , drain current (a) v gs = -3v v gs = -1.5v v gs = -4.5v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage figure 3. normalized on - resistance -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = -2.6a v gs = -4.5v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 12345 50 100 150 200 250 300 pulse duration = 80 p s duty cycle = 0.5%max t j = 125 o c t j = 25 o c i d = -2.6a r ds(on) , drain to source on-resistance ( m : ) -v gs , gate to source voltage (v) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 0.0 0.5 1.0 1.5 2.0 2.5 0 3 6 9 v dd = -5v pulse duration = 80 p s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 150 o c -i d , drain current (a) -v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 4 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0v -i s , reverse drain current (a) -v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDG332PZ p-channel powertrench ? mosfet www.fairchildsemi.com 4 ?2008 fairchild semiconductor corporation FDG332PZ rev.b 1 figure 7. 02468 0.0 1.5 3.0 4.5 i d = -2.6a v dd = -15v v dd = -5v -v gs , gate to source voltage(v) q g , gate charge (nc) v dd = -10v gate charge characteristics figure 8. 0.1 1 10 100 1000 30 20 f = 1mhz v gs = 0v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.1 1 10 0.01 0.1 1 10 10s 1s 100ms dc 10ms 1ms 100us this area is limited by r ds(on) 50 single pulse t j = max rated r t ja = 260 o c/w t a = 25 o c -i d , drain current (a) -v ds , drain to source voltage (v) f o r w a r d b i a s s a f e operating area figure 10. 0 5 10 15 20 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 5 v gs = 0v t j = 25 o c t j = 150 o c -v gs , gate to source voltage (v) -i g , gate leakage current(ua) gate leakage current vs gate to source voltage figure 11. transient thermal response curve 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.1 1 10 100 p (pk) , peak transient power (w) v gs = -4.5v single pulse r t ja = 260 o c/w t a = 25 o c t, pulse width (s) typical characteristics t j = 25c unless otherwise noted
FDG332PZ p-channel powertrench ? mosfet www.fairchildsemi.com 5 ?2008 fairchild semiconductor corporation FDG332PZ rev.b 1 figure 12. 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse r t ja = 260 o c/w 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z qja x r qja + t a transient thermal response curve typical characteristics t j = 25c unless otherwise noted
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